[24pcs Hisa]
- Nambari ya Sehemu:
- BSP129E6327T
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 240V 350MA SOT223.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Moduli za Dereva za Nguvu, Viwango - Zener - Arrays, Viwango - Rectifiers - Arrays, Transistors - Ushirikiano uliopangwa and Transistors - IGBTs - Moduli ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSP129E6327T electronic components. BSP129E6327T can be shipped within 24 hours after order. If you have any demands for BSP129E6327T, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSP129E6327T Sifa za Bidhaa
Nambari ya Sehemu :
BSP129E6327T
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 240V 350MA SOT223
Mfululizo :
SIPMOS®
Hali ya Sehemu :
Discontinued at Digi-Key
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
240V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
350mA (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
0V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
6 Ohm @ 350mA, 10V
Vgs (th) (Max) @ Id :
1V @ 108µA
Malango ya Lango (Qg) (Max) @ Vgs :
5.7nC @ 5V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
108pF @ 25V
Makala ya FET :
Depletion Mode
Kuondoa Nguvu (Max) :
1.8W (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-SOT223-4
Kifurushi / Kesi :
TO-261-4, TO-261AA
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