Vishay Siliconix - SQJ443EP-T1_GE3

KEY Part #: K6420025

SQJ443EP-T1_GE3 Bei (USD) [152759pcs Hisa]

  • 1 pcs$0.24213
  • 3,000 pcs$0.20465

Nambari ya Sehemu:
SQJ443EP-T1_GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 40V 40A POWERPAKSO-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - RF, Transistors - JFETs, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - Kufika and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SQJ443EP-T1_GE3 electronic components. SQJ443EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ443EP-T1_GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SQJ443EP-T1_GE3 Sifa za Bidhaa

Nambari ya Sehemu : SQJ443EP-T1_GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 40V 40A POWERPAKSO-8
Mfululizo : Automotive, AEC-Q101, TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 40V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 40A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 29 mOhm @ 18A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 57nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2030pF @ 20V
Makala ya FET : -
Kuondoa Nguvu (Max) : 83W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® SO-8
Kifurushi / Kesi : PowerPAK® SO-8

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