BSC123N10LSGATMA1 Bei (USD) [116263pcs Hisa]
- 1 pcs$0.31813
- 5,000 pcs$0.30546
- Nambari ya Sehemu:
- BSC123N10LSGATMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 100V 71A TDSON-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Kusudi Maalum, Thyristors - TRIAC and Thyristors - DIAC, SIDAC ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSC123N10LSGATMA1 electronic components. BSC123N10LSGATMA1 can be shipped within 24 hours after order. If you have any demands for BSC123N10LSGATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSC123N10LSGATMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSC123N10LSGATMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 100V 71A TDSON-8
Mfululizo :
OptiMOS™
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10.6A (Ta), 71A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
12.3 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id :
2.4V @ 72µA
Malango ya Lango (Qg) (Max) @ Vgs :
68nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
4900pF @ 50V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
114W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PG-TDSON-8
Kifurushi / Kesi :
8-PowerTDFN
Habari mpya kabisa
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