Microsemi Corporation - JANTX1N6622

KEY Part #: K6425034

JANTX1N6622 Bei (USD) [3378pcs Hisa]

  • 1 pcs$10.93388
  • 10 pcs$9.93778
  • 25 pcs$9.19243

Nambari ya Sehemu:
JANTX1N6622
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
DIODE GEN PURP 660V 2A AXIAL. Rectifiers Rectifier
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - JFETs, Transistors - FET, MOSFETs - Moja, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Arrays and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
We specialize in Microsemi Corporation JANTX1N6622 electronic components. JANTX1N6622 can be shipped within 24 hours after order. If you have any demands for JANTX1N6622, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JANTX1N6622 Sifa za Bidhaa

Nambari ya Sehemu : JANTX1N6622
Mzalishaji : Microsemi Corporation
Maelezo : DIODE GEN PURP 660V 2A AXIAL
Mfululizo : Military, MIL-PRF-19500/585
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 660V
Sasa - Wastani Aliyerekebishwa (Io) : 2A
Voltage - Mbele (Vf) (Max) @ Kama : 1.4V @ 1.2A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 30ns
Sasa - Rejea kuvuja @ Vr : 500nA @ 660V
Uwezo @ Vr, F : 10pF @ 10V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : A, Axial
Kifurushi cha Kifaa cha Mtoaji : -
Joto la Kufanya kazi - Junction : -65°C ~ 150°C

Unaweza pia Kuvutiwa Na
  • FGD5T120SH

    ON Semiconductor

    IGBT 1200V 5A FS3 DPAK.

  • FGD3N60UNDF

    ON Semiconductor

    IGBT 600V 6A 60W DPAK.

  • BAS40E6433HTMA1

    Infineon Technologies

    DIODE SCHOTTKY 40V 120MA SOT23-3.

  • IGB01N120H2ATMA1

    Infineon Technologies

    IGBT 1200V 3.2A 28W TO263-3-2.

  • LXA06B600

    Power Integrations

    DIODE GEN PURP 600V 6A TO263AB. Rectifiers X-Series 600V 6A Low Qrr

  • QH05BZ600

    Power Integrations

    DIODE GEN PURP 600V 5A TO263AB. Diodes - General Purpose, Power, Switching Super-Low Qrr. 600V, 5A, Rectifier