Infineon Technologies - IGB01N120H2ATMA1

KEY Part #: K6424936

IGB01N120H2ATMA1 Bei (USD) [119020pcs Hisa]

  • 1 pcs$0.31077
  • 1,000 pcs$0.28841

Nambari ya Sehemu:
IGB01N120H2ATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 1200V 3.2A 28W TO263-3-2.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays, Thyristors - TRIAC, Transistors - FET, MOSFETs - RF and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in Infineon Technologies IGB01N120H2ATMA1 electronic components. IGB01N120H2ATMA1 can be shipped within 24 hours after order. If you have any demands for IGB01N120H2ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IGB01N120H2ATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IGB01N120H2ATMA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT 1200V 3.2A 28W TO263-3-2
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : -
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 3.2A
Sasa - Mtoza Ushuru (Icm) : 3.5A
Vce (on) (Max) @ Vge, Ic : 2.8V @ 15V, 1A
Nguvu - Max : 28W
Kubadilisha Nishati : 140µJ
Aina ya Kuingiza : Standard
Malango ya Lango : 8.6nC
Td (on / off) @ 25 ° C : 13ns/370ns
Hali ya Uchunguzi : 800V, 1A, 241 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : -
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-3-2