BSO615NGHUMA1 Bei (USD) [209768pcs Hisa]
- 1 pcs$0.17633
- Nambari ya Sehemu:
- BSO615NGHUMA1
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET 2N-CH 60V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Thyristors - TRIAC, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw and Transistors - FET, MOSFETs - Arrays ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies BSO615NGHUMA1 electronic components. BSO615NGHUMA1 can be shipped within 24 hours after order. If you have any demands for BSO615NGHUMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
BSO615NGHUMA1 Sifa za Bidhaa
Nambari ya Sehemu :
BSO615NGHUMA1
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET 2N-CH 60V 2.6A 8SOIC
Mfululizo :
SIPMOS®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Logic Level Gate
Kukata kwa Voltage Voltage (Vdss) :
60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.6A
Njia ya Kutumia (Max) @ Id, Vgs :
150 mOhm @ 2.6A, 4.5V
Vgs (th) (Max) @ Id :
2V @ 20µA
Malango ya Lango (Qg) (Max) @ Vgs :
20nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
380pF @ 25V
Nguvu - Max :
2W
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
PG-DSO-8
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