IS43DR16128C-3DBL Bei (USD) [10830pcs Hisa]
- 1 pcs$5.03720
- Nambari ya Sehemu:
- IS43DR16128C-3DBL
- Mzalishaji:
- ISSI, Integrated Silicon Solution Inc
- Maelezo ya kina:
- IC DRAM 2G PARALLEL 84TWBGA. DRAM DDR2,2G,1.8V, RoHs 333MHz,128Mx16
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: PMIC - Madereva ya LED, Maingiliano - UARTs (Transformer ya Universal Asyn, Kumbukumbu - Batri, Mantiki - Kumbukumbu za FIFO, PMIC - Madereva wa Lango, PMIC - Viwango vya kudhibiti - Dereva wa DC DC Kub, PMIC - AU Kidhibiti, Viwango Bora and Saa / Majira ya saa - Bafa ya Clock, Madereva ...
- Faida ya Ushindani:
- We specialize in ISSI, Integrated Silicon Solution Inc IS43DR16128C-3DBL electronic components. IS43DR16128C-3DBL can be shipped within 24 hours after order. If you have any demands for IS43DR16128C-3DBL, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IS43DR16128C-3DBL Sifa za Bidhaa
Nambari ya Sehemu :
IS43DR16128C-3DBL
Mzalishaji :
ISSI, Integrated Silicon Solution Inc
Maelezo :
IC DRAM 2G PARALLEL 84TWBGA
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya kumbukumbu :
Volatile
Fomati ya kumbukumbu :
DRAM
Teknolojia :
SDRAM - DDR2
Saizi ya kumbukumbu :
2Gb (128M x 16)
Usafirishaji wa Saa :
333MHz
Andika Wakati wa Msaada - Neno, Ukurasa :
15ns
Wakati wa Upataji :
450ps
Maingiliano ya kumbukumbu :
Parallel
Voltage - Ugavi :
1.7V ~ 1.9V
Joto la Kufanya kazi :
0°C ~ 85°C (TC)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
84-TFBGA
Kifurushi cha Kifaa cha Mtoaji :
84-TWBGA (8x12.5)
Habari mpya kabisa
Unaweza pia Kuvutiwa Na
-
TH58NYG3S0HBAI4
Toshiba Memory America, Inc.
8GB SLC NAND 24NM BGA 9X11 3.3V. NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
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