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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

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  5. TH58NYG3S0HBAI4

Toshiba Memory America, Inc. - TH58NYG3S0HBAI4

KEY Part #: K929459

TH58NYG3S0HBAI4 Bei (USD) [10841pcs Hisa]

  • 1 pcs$4.22631
Nambari ya Sehemu:
TH58NYG3S0HBAI4
Mzalishaji:
Toshiba Memory America, Inc.
Maelezo ya kina:
8GB SLC NAND 24NM BGA 9X11 3.3V. NAND Flash 1.8V 8Gb 24nm SLC NAND (EEPROM)
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE), PMIC - Usajili wa Voltage - DC DC Kubadilisha Regu, PMIC - Usajili wa Voltage - Kusudi Maalum, Iliyoingizwa - Microprocessors, PMIC - Marejeo ya Voltage, Mantiki - Latches, Kumbukumbu - Watawala and Mantiki - Watafsiri, Shifters za Kiwango ...
Faida ya Ushindani:
We specialize in Toshiba Memory America, Inc. TH58NYG3S0HBAI4 electronic components. TH58NYG3S0HBAI4 can be shipped within 24 hours after order. If you have any demands for TH58NYG3S0HBAI4, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TH58NYG3S0HBAI4 Sifa za Bidhaa

Nambari ya Sehemu : TH58NYG3S0HBAI4
Mzalishaji : Toshiba Memory America, Inc.
Maelezo : 8GB SLC NAND 24NM BGA 9X11 3.3V
Mfululizo : -
Hali ya Sehemu : Active
Aina ya kumbukumbu : Non-Volatile
Fomati ya kumbukumbu : FLASH
Teknolojia : FLASH - NAND (SLC)
Saizi ya kumbukumbu : 8Gb (1G x 8)
Usafirishaji wa Saa : -
Andika Wakati wa Msaada - Neno, Ukurasa : 25ns
Wakati wa Upataji : 25ns
Maingiliano ya kumbukumbu : Parallel
Voltage - Ugavi : 1.7V ~ 1.95V
Joto la Kufanya kazi : -40°C ~ 85°C (TA)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : 63-VFBGA
Kifurushi cha Kifaa cha Mtoaji : 63-TFBGA (9x11)

Habari mpya kabisa

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