IXYS - IXFN60N80P

KEY Part #: K6398518

IXFN60N80P Bei (USD) [3327pcs Hisa]

  • 1 pcs$13.67198
  • 10 pcs$12.64438
  • 25 pcs$11.61919
  • 100 pcs$10.79906
  • 250 pcs$9.91051

Nambari ya Sehemu:
IXFN60N80P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 800V 53A SOT-227B.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Thyristors - SCRs - Moduli, Transistors - JFETs, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays, Transistors - Kusudi Maalum and Transistors - Bipolar (BJT) - RF ...
Faida ya Ushindani:
We specialize in IXYS IXFN60N80P electronic components. IXFN60N80P can be shipped within 24 hours after order. If you have any demands for IXFN60N80P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN60N80P Sifa za Bidhaa

Nambari ya Sehemu : IXFN60N80P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 800V 53A SOT-227B
Mfululizo : PolarHV™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 53A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 140 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 5V @ 8mA
Malango ya Lango (Qg) (Max) @ Vgs : 250nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 18000pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 1040W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-227B
Kifurushi / Kesi : SOT-227-4, miniBLOC

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