DMN3030LFG-7 Bei (USD) [490925pcs Hisa]
- 1 pcs$0.07534
- 2,000 pcs$0.03915
- Nambari ya Sehemu:
- DMN3030LFG-7
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET N-CH 30V PWRDI3333-8.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli, Viwango - RF, Transistors - IGBTs - Arrays and Moduli za Dereva za Nguvu ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated DMN3030LFG-7 electronic components. DMN3030LFG-7 can be shipped within 24 hours after order. If you have any demands for DMN3030LFG-7, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
DMN3030LFG-7 Sifa za Bidhaa
Nambari ya Sehemu :
DMN3030LFG-7
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET N-CH 30V PWRDI3333-8
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs :
18 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
17.4nC @ 10V
Vgs (Max) :
±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
751pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
900mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
PowerDI3333-8
Kifurushi / Kesi :
8-PowerVDFN
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