Infineon Technologies - IPL60R365P7AUMA1

KEY Part #: K6419032

IPL60R365P7AUMA1 Bei (USD) [88338pcs Hisa]

  • 1 pcs$0.44983
  • 3,000 pcs$0.44759

Nambari ya Sehemu:
IPL60R365P7AUMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 650V 10A VSON-4.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - RF, Thyristors - SCR, Thyristors - SCRs - Moduli, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Arrays and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPL60R365P7AUMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPL60R365P7AUMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 650V 10A VSON-4
Mfululizo : CoolMOS™ P7
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 10A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 365 mOhm @ 2.7A, 10V
Vgs (th) (Max) @ Id : 4V @ 140µA
Malango ya Lango (Qg) (Max) @ Vgs : 13nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 555pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 46W (Tc)
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-VSON-4
Kifurushi / Kesi : 4-PowerTSFN