Microsemi Corporation - JAN1N5416US

KEY Part #: K6427035

JAN1N5416US Bei (USD) [7063pcs Hisa]

  • 1 pcs$5.86387
  • 100 pcs$5.83469

Nambari ya Sehemu:
JAN1N5416US
Mzalishaji:
Microsemi Corporation
Maelezo ya kina:
DIODE GEN PURP 100V 3A AXIAL. Rectifiers Rectifier
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

JAN1N5416US Sifa za Bidhaa

Nambari ya Sehemu : JAN1N5416US
Mzalishaji : Microsemi Corporation
Maelezo : DIODE GEN PURP 100V 3A AXIAL
Mfululizo : Military, MIL-PRF-19500/411
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 100V
Sasa - Wastani Aliyerekebishwa (Io) : 3A
Voltage - Mbele (Vf) (Max) @ Kama : 1.5V @ 9A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 150ns
Sasa - Rejea kuvuja @ Vr : 1µA @ 100V
Uwezo @ Vr, F : -
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : B, Axial
Kifurushi cha Kifaa cha Mtoaji : -
Joto la Kufanya kazi - Junction : -65°C ~ 175°C

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