IXYS - IXFN27N80Q

KEY Part #: K6393637

IXFN27N80Q Bei (USD) [3139pcs Hisa]

  • 1 pcs$14.56169
  • 10 pcs$14.48924

Nambari ya Sehemu:
IXFN27N80Q
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 800V 27A SOT-227B.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Viwango - Zener - Moja, Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Transistors - IGBTs - Moja, Viwango - Rectifiers - Arrays, Viwango - Rectifiers - Moja and Thyristors - DIAC, SIDAC ...
Faida ya Ushindani:
We specialize in IXYS IXFN27N80Q electronic components. IXFN27N80Q can be shipped within 24 hours after order. If you have any demands for IXFN27N80Q, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFN27N80Q Sifa za Bidhaa

Nambari ya Sehemu : IXFN27N80Q
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 800V 27A SOT-227B
Mfululizo : HiPerFET™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 27A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 320 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 4.5V @ 4mA
Malango ya Lango (Qg) (Max) @ Vgs : 170nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 7600pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 520W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-227B
Kifurushi / Kesi : SOT-227-4, miniBLOC