Panasonic Electronic Components - DRA2115G0L

KEY Part #: K6526082

DRA2115G0L Bei (USD) [1233629pcs Hisa]

  • 1 pcs$0.02998
  • 3,000 pcs$0.02907
  • 6,000 pcs$0.02616
  • 15,000 pcs$0.02326
  • 30,000 pcs$0.02180
  • 75,000 pcs$0.01938

Nambari ya Sehemu:
DRA2115G0L
Mzalishaji:
Panasonic Electronic Components
Maelezo ya kina:
TRANS PREBIAS PNP 200MW MINI3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Thyristors - SCRs - Moduli, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moduli, Moduli za Dereva za Nguvu, Transistors - JFETs and Viwango - RF ...
Faida ya Ushindani:
We specialize in Panasonic Electronic Components DRA2115G0L electronic components. DRA2115G0L can be shipped within 24 hours after order. If you have any demands for DRA2115G0L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DRA2115G0L Sifa za Bidhaa

Nambari ya Sehemu : DRA2115G0L
Mzalishaji : Panasonic Electronic Components
Maelezo : TRANS PREBIAS PNP 200MW MINI3
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : PNP - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 100 kOhms
Upinzani - Base ya Emitter (R2) : -
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 500µA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : Mini3-G3-B

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