Infineon Technologies - SPD06N60C3BTMA1

KEY Part #: K6409295

SPD06N60C3BTMA1 Bei (USD) [332pcs Hisa]

  • 2,500 pcs$0.31991

Nambari ya Sehemu:
SPD06N60C3BTMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 650V 6.2A TO-252.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - IGBTs - Arrays, Thyristors - TRIAC, Transistors - Bipolar (BJT) - RF, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Viwango - Rectifiers - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SPD06N60C3BTMA1 Sifa za Bidhaa

Nambari ya Sehemu : SPD06N60C3BTMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 650V 6.2A TO-252
Mfululizo : CoolMOS™
Hali ya Sehemu : Obsolete
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 650V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 6.2A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 750 mOhm @ 3.9A, 10V
Vgs (th) (Max) @ Id : 3.9V @ 260µA
Malango ya Lango (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 620pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 74W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3
Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63

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