Toshiba Semiconductor and Storage - CMG06(TE12L,Q,M)

KEY Part #: K6431700

CMG06(TE12L,Q,M) Bei (USD) [871993pcs Hisa]

  • 1 pcs$0.04242

Nambari ya Sehemu:
CMG06(TE12L,Q,M)
Mzalishaji:
Toshiba Semiconductor and Storage
Maelezo ya kina:
DIODE GEN PURP 600V 1A M-FLAT. Rectifiers 600V Vrrm 1.0A IF 1.1V VFM 15A IFRM
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - RF, Transistors - IGBTs - Arrays, Transistors - Bipolar (BJT) - Moja, Thyristors - TRIAC, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - RF and Thyristors - SCRs - Moduli ...
Faida ya Ushindani:
We specialize in Toshiba Semiconductor and Storage CMG06(TE12L,Q,M) electronic components. CMG06(TE12L,Q,M) can be shipped within 24 hours after order. If you have any demands for CMG06(TE12L,Q,M), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

CMG06(TE12L,Q,M) Sifa za Bidhaa

Nambari ya Sehemu : CMG06(TE12L,Q,M)
Mzalishaji : Toshiba Semiconductor and Storage
Maelezo : DIODE GEN PURP 600V 1A M-FLAT
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 1A
Kasi : Standard Recovery >500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : -
Sasa - Rejea kuvuja @ Vr : 10µA @ 600V
Uwezo @ Vr, F : -
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SOD-128
Kifurushi cha Kifaa cha Mtoaji : M-FLAT (2.4x3.8)
Joto la Kufanya kazi - Junction : -40°C ~ 150°C

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