Taiwan Semiconductor Corporation - MUR4L20HB0G

KEY Part #: K6433145

MUR4L20HB0G Bei (USD) [358318pcs Hisa]

  • 1 pcs$0.10323

Nambari ya Sehemu:
MUR4L20HB0G
Mzalishaji:
Taiwan Semiconductor Corporation
Maelezo ya kina:
DIODE GEN PURP 200V 4A DO201AD.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Viwango - RF, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
We specialize in Taiwan Semiconductor Corporation MUR4L20HB0G electronic components. MUR4L20HB0G can be shipped within 24 hours after order. If you have any demands for MUR4L20HB0G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MUR4L20HB0G Sifa za Bidhaa

Nambari ya Sehemu : MUR4L20HB0G
Mzalishaji : Taiwan Semiconductor Corporation
Maelezo : DIODE GEN PURP 200V 4A DO201AD
Mfululizo : Automotive, AEC-Q101
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 200V
Sasa - Wastani Aliyerekebishwa (Io) : 4A
Voltage - Mbele (Vf) (Max) @ Kama : 890mV @ 4A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 25ns
Sasa - Rejea kuvuja @ Vr : 5µA @ 200V
Uwezo @ Vr, F : 65pF @ 4V, 1MHz
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : DO-201AD, Axial
Kifurushi cha Kifaa cha Mtoaji : DO-201AD
Joto la Kufanya kazi - Junction : -55°C ~ 175°C

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