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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
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  5. MCP14E10-E/P

Microchip Technology - MCP14E10-E/P

KEY Part #: K1223873

MCP14E10-E/P Bei (USD) [55903pcs Hisa]

  • 1 pcs$0.79439
  • 25 pcs$0.65859
  • 100 pcs$0.59705
Nambari ya Sehemu:
MCP14E10-E/P
Mzalishaji:
Microchip Technology
Maelezo ya kina:
IC MOSFET DRIVER 3A 8DIP. Gate Drivers 2A MOSFET Driver
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Kumbukumbu - Batri, PMIC - Watawala wa Nguvu Zaidi ya Ethernet (PoE), Mantiki - Latches, PMIC - Madereva wa Laser, Iliyoingizwa - DSP (Wasindikaji wa Ishara ya Dijit, ICs Maalum, Maingiliano - Moduli and Upataji wa Takwimu - Mwisho wa Analog Mbele (AFE) ...
Faida ya Ushindani:
We specialize in Microchip Technology MCP14E10-E/P electronic components. MCP14E10-E/P can be shipped within 24 hours after order. If you have any demands for MCP14E10-E/P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

MCP14E10-E/P Sifa za Bidhaa

Nambari ya Sehemu : MCP14E10-E/P
Mzalishaji : Microchip Technology
Maelezo : IC MOSFET DRIVER 3A 8DIP
Mfululizo : -
Hali ya Sehemu : Active
Usanidi ulioendeshwa : Low-Side
Aina ya Channel : Independent
Idadi ya Madereva : 2
Aina ya Lango : IGBT, N-Channel, P-Channel MOSFET
Voltage - Ugavi : 4.5V ~ 18V
Logic Voltage - VIL, VIH : 0.8V, 2.4V
Pato la Sasa (Pato, Mchanganyiko) : 3A, 3A
Aina ya Kuingiza : Non-Inverting
High Side Voltage - Max (Bootstrap) : -
Wakati wa kupanda / Kuanguka (Aina) : 25ns, 25ns
Joto la Kufanya kazi : -40°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi / Kesi : 8-DIP (0.300", 7.62mm)
Kifurushi cha Kifaa cha Mtoaji : 8-PDIP
Unaweza pia Kuvutiwa Na
  • ISL89165FRTAZ-T

    Renesas Electronics America Inc.

    MOSFET DRIVER 2CH 3.3V 6A 8TDFN. Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3

  • ISL89163FRTAZ-T

    Renesas Electronics America Inc.

    MOSFET DRIVER 2CH 3.3V 6A 8TDFN. Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3

  • ISL89165FRTBZ-T

    Renesas Electronics America Inc.

    MOSFET DRIVER 2CH 5.0V 6A 8TDFN. Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3

  • ISL89163FRTBZ-T

    Renesas Electronics America Inc.

    MOSFET DRIVER 2CH 5.0V 6A 8TDFN. Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3

  • ISL89164FRTBZ-T

    Renesas Electronics America Inc.

    MOSFET DRIVER 2CH 5.0V 6A 8TDFN. Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3

  • ISL89164FRTAZ-T

    Renesas Electronics America Inc.

    MOSFET DRIVER 2CH 3.3V 6A 8TDFN. Gate Drivers 6A PEAK HI SPD PWR MSFT DRVR 8LD 3X3

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