Nambari ya Sehemu :
IRS2607DSTRPBF
Mzalishaji :
Infineon Technologies
Maelezo :
IC DVR MOSFET/IGBT N-CH 8-SOIC
Hali ya Sehemu :
Obsolete
Usanidi ulioendeshwa :
Half-Bridge
Aina ya Channel :
Independent
Aina ya Lango :
IGBT, N-Channel MOSFET
Voltage - Ugavi :
10V ~ 20V
Logic Voltage - VIL, VIH :
0.8V, 2.2V
Pato la Sasa (Pato, Mchanganyiko) :
200mA, 350mA
Aina ya Kuingiza :
Non-Inverting
High Side Voltage - Max (Bootstrap) :
600V
Wakati wa kupanda / Kuanguka (Aina) :
150ns, 50ns
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SOIC