STMicroelectronics - STGB30M65DF2

KEY Part #: K6422358

STGB30M65DF2 Bei (USD) [44488pcs Hisa]

  • 1 pcs$0.88328
  • 1,000 pcs$0.87889
  • 2,000 pcs$0.83704

Nambari ya Sehemu:
STGB30M65DF2
Mzalishaji:
STMicroelectronics
Maelezo ya kina:
IGBT 650V 30A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa and Viwango - RF ...
Faida ya Ushindani:
We specialize in STMicroelectronics STGB30M65DF2 electronic components. STGB30M65DF2 can be shipped within 24 hours after order. If you have any demands for STGB30M65DF2, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB30M65DF2 Sifa za Bidhaa

Nambari ya Sehemu : STGB30M65DF2
Mzalishaji : STMicroelectronics
Maelezo : IGBT 650V 30A D2PAK
Mfululizo : -
Hali ya Sehemu : Active
Aina ya IGBT : Trench Field Stop
Voltage - Kukusanya Emitter Kuvunja (Max) : 650V
Sasa - Mtoza (Ic) (Max) : 60A
Sasa - Mtoza Ushuru (Icm) : 120A
Vce (on) (Max) @ Vge, Ic : 2V @ 15V, 30A
Nguvu - Max : 258W
Kubadilisha Nishati : 300µJ (on), 960µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 80nC
Td (on / off) @ 25 ° C : 31.6ns/115ns
Hali ya Uchunguzi : 400V, 30A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 140ns
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : D2PAK