STMicroelectronics - STGB14NC60KDT4

KEY Part #: K6423109

STGB14NC60KDT4 Bei (USD) [95807pcs Hisa]

  • 1 pcs$0.40812
  • 1,000 pcs$0.34323
  • 2,000 pcs$0.31956
  • 5,000 pcs$0.31561

Nambari ya Sehemu:
STGB14NC60KDT4
Mzalishaji:
STMicroelectronics
Maelezo ya kina:
IGBT 600V 25A 80W D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCR, Transistors - FET, MOSFETs - Arrays, Viwango - Bridge Rectifiers, Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - RF, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Moduli za Dereva za Nguvu ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

STGB14NC60KDT4 Sifa za Bidhaa

Nambari ya Sehemu : STGB14NC60KDT4
Mzalishaji : STMicroelectronics
Maelezo : IGBT 600V 25A 80W D2PAK
Mfululizo : PowerMESH™
Hali ya Sehemu : Active
Aina ya IGBT : -
Voltage - Kukusanya Emitter Kuvunja (Max) : 600V
Sasa - Mtoza (Ic) (Max) : 25A
Sasa - Mtoza Ushuru (Icm) : 50A
Vce (on) (Max) @ Vge, Ic : 2.5V @ 15V, 7A
Nguvu - Max : 80W
Kubadilisha Nishati : 82µJ (on), 155µJ (off)
Aina ya Kuingiza : Standard
Malango ya Lango : 34.4nC
Td (on / off) @ 25 ° C : 22.5ns/116ns
Hali ya Uchunguzi : 390V, 7A, 10 Ohm, 15V
Rudisha Wakati wa Kuokoa (trr) : 37ns
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Kifurushi cha Kifaa cha Mtoaji : D2PAK