Vishay Siliconix - SI7121DN-T1-GE3

KEY Part #: K6393337

SI7121DN-T1-GE3 Bei (USD) [150065pcs Hisa]

  • 1 pcs$0.24648
  • 3,000 pcs$0.23145

Nambari ya Sehemu:
SI7121DN-T1-GE3
Mzalishaji:
Vishay Siliconix
Maelezo ya kina:
MOSFET P-CH 30V 16A 1212-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Viwango - Zener - Moja, Transistors - IGBTs - Arrays, Transistors - FET, MOSFETs - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - RF, Thyristors - DIAC, SIDAC and Transistors - Ushirikiano uliopangwa ...
Faida ya Ushindani:
We specialize in Vishay Siliconix SI7121DN-T1-GE3 electronic components. SI7121DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7121DN-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI7121DN-T1-GE3 Sifa za Bidhaa

Nambari ya Sehemu : SI7121DN-T1-GE3
Mzalishaji : Vishay Siliconix
Maelezo : MOSFET P-CH 30V 16A 1212-8
Mfululizo : TrenchFET®
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 16A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 18 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id : 3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±25V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1960pF @ 15V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.7W (Ta), 52W (Tc)
Joto la Kufanya kazi : -50°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PowerPAK® 1212-8
Kifurushi / Kesi : PowerPAK® 1212-8