SI8810EDB-T2-E1 Bei (USD) [644086pcs Hisa]
- 1 pcs$0.05771
- 3,000 pcs$0.05743
- Nambari ya Sehemu:
- SI8810EDB-T2-E1
- Mzalishaji:
- Vishay Siliconix
- Maelezo ya kina:
- MOSFET N-CH 20V 2.1A MICROFOOT.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - FET, MOSFETs - Arrays, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moduli, Transistors - Ushirikiano uliopangwa, Transistors - FET, MOSFETs - RF and Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl ...
- Faida ya Ushindani:
- We specialize in Vishay Siliconix SI8810EDB-T2-E1 electronic components. SI8810EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8810EDB-T2-E1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8810EDB-T2-E1 Sifa za Bidhaa
Nambari ya Sehemu :
SI8810EDB-T2-E1
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 20V 2.1A MICROFOOT
Mfululizo :
TrenchFET®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
-
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
1.5V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs :
72 mOhm @ 1A, 4.5V
Vgs (th) (Max) @ Id :
900mV @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8nC @ 8V
Vgs (Max) :
±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
245pF @ 10V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
500mW (Ta)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-Microfoot
Kifurushi / Kesi :
4-XFBGA
Habari mpya kabisa
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