FCD2250N80Z Bei (USD) [152236pcs Hisa]
- 1 pcs$0.24296
- 5,000 pcs$0.23145
- Nambari ya Sehemu:
- FCD2250N80Z
- Mzalishaji:
- ON Semiconductor
- Maelezo ya kina:
- MOSFET N-CH 800V 2.6A TO252-3.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - Ushirikiano uliopangwa, Viwango - Bridge Rectifiers, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Moja, Transistors - Kusudi Maalum, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Viwango - Rectifiers - Arrays ...
- Faida ya Ushindani:
- We specialize in ON Semiconductor FCD2250N80Z electronic components. FCD2250N80Z can be shipped within 24 hours after order. If you have any demands for FCD2250N80Z, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
FCD2250N80Z Sifa za Bidhaa
Nambari ya Sehemu :
FCD2250N80Z
Mzalishaji :
ON Semiconductor
Maelezo :
MOSFET N-CH 800V 2.6A TO252-3
Mfululizo :
SuperFET® II
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.6A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
2.25 Ohm @ 1.3A, 10V
Vgs (th) (Max) @ Id :
4.5V @ 260µA
Malango ya Lango (Qg) (Max) @ Vgs :
14nC @ 10V
Vgs (Max) :
±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
585pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
39W (Tc)
Joto la Kufanya kazi :
-55°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
D-Pak
Kifurushi / Kesi :
TO-252-3, DPak (2 Leads + Tab), SC-63
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