Vishay Semiconductor Diodes Division - NSB8MTHE3/81

KEY Part #: K6447134

[1527pcs Hisa]


    Nambari ya Sehemu:
    NSB8MTHE3/81
    Mzalishaji:
    Vishay Semiconductor Diodes Division
    Maelezo ya kina:
    DIODE GEN PURP 1KV 8A TO263AB.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays, Transistors - IGBTs - Moja, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Thyristors - SCR and Transistors - FET, MOSFETs - RF ...
    Faida ya Ushindani:
    We specialize in Vishay Semiconductor Diodes Division NSB8MTHE3/81 electronic components. NSB8MTHE3/81 can be shipped within 24 hours after order. If you have any demands for NSB8MTHE3/81, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    NSB8MTHE3/81 Sifa za Bidhaa

    Nambari ya Sehemu : NSB8MTHE3/81
    Mzalishaji : Vishay Semiconductor Diodes Division
    Maelezo : DIODE GEN PURP 1KV 8A TO263AB
    Mfululizo : -
    Hali ya Sehemu : Discontinued at Digi-Key
    Aina ya Diode : Standard
    Voltage - DC Reverse (Vr) (Max) : 1000V
    Sasa - Wastani Aliyerekebishwa (Io) : 8A
    Voltage - Mbele (Vf) (Max) @ Kama : 1.1V @ 8A
    Kasi : Standard Recovery >500ns, > 200mA (Io)
    Rudisha Wakati wa Kuokoa (trr) : -
    Sasa - Rejea kuvuja @ Vr : 10µA @ 1000V
    Uwezo @ Vr, F : 55pF @ 4V, 1MHz
    Aina ya Kuinua : Surface Mount
    Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
    Kifurushi cha Kifaa cha Mtoaji : TO-263AB
    Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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