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Ikiwa eneo lako halijaorodheshwa, tafadhali chagua moja ya yafuatayo:

polskiSvenskaespañolItaliaFrançaisEnglishDeutschFrançaisItaliaespañolPortuguês日本語한국의русскийMaoričeštinaSlovenskáΕλλάδαDanskEuskeraSuomiromânescíslenskaSvenskaMelayuالعربيةGaeilgeGalegoTürk diliKongeriketRepublika e ShqipërisëБеларусьEesti Vabariikಕನ್ನಡkannaḍalietuviųLatviešuAyitiසිංහලAzərbaycanภาษาไทยनेपालीtiếng ViệtPilipinoსაქართველოCambodiaپښتوТоҷикӣAfrikaansKiswahilimalaɡasʲفارسیతెలుగుpolski
  1. Nyumbani
  2. Bidhaa
  3. Bidhaa za Semiconductor za Disc
  4. Transistors - FET, MOSFETs - Moja
  5. FDP2D3N10C

ON Semiconductor - FDP2D3N10C

KEY Part #: K6394143

FDP2D3N10C Bei (USD) [25659pcs Hisa]

  • 1 pcs$1.60614
Nambari ya Sehemu:
FDP2D3N10C
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 222A TO220-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Moja, Transistors - FET, MOSFETs - Moja, Moduli za Dereva za Nguvu, Viwango - Bridge Rectifiers, Transistors - Kusudi Maalum and Transistors - Bipolar (BJT) - Moja ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDP2D3N10C electronic components. FDP2D3N10C can be shipped within 24 hours after order. If you have any demands for FDP2D3N10C, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDP2D3N10C Sifa za Bidhaa

Nambari ya Sehemu : FDP2D3N10C
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 222A TO220-3
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 222A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.3 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4V @ 700µA
Malango ya Lango (Qg) (Max) @ Vgs : 152nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 11180pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 214W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : TO-220-3
Kifurushi / Kesi : TO-220-3

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