Nambari ya Sehemu :
EPC2111
Maelezo :
GAN TRANS ASYMMETRICAL HALF BRID
Aina ya FET :
2 N-Channel (Half Bridge)
Makala ya FET :
GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) :
30V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
16A (Ta)
Njia ya Kutumia (Max) @ Id, Vgs :
19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 5mA
Malango ya Lango (Qg) (Max) @ Vgs :
2.2nC @ 5V, 5.7nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
230pF @ 15V, 590pF @ 15V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Die