Diodes Incorporated - DMG3413L-7

KEY Part #: K6402525

DMG3413L-7 Bei (USD) [2673pcs Hisa]

  • 3,000 pcs$0.05384

Nambari ya Sehemu:
DMG3413L-7
Mzalishaji:
Diodes Incorporated
Maelezo ya kina:
MOSFET P-CH 20V 3A SOT23.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - Bipolar (BJT) - Kufika, Transistors - IGBTs - Moja, Viwango - Rectifiers - Moja, Transistors - Bipolar (BJT) - Moja and Transistors - Kusudi Maalum ...
Faida ya Ushindani:
We specialize in Diodes Incorporated DMG3413L-7 electronic components. DMG3413L-7 can be shipped within 24 hours after order. If you have any demands for DMG3413L-7, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DMG3413L-7 Sifa za Bidhaa

Nambari ya Sehemu : DMG3413L-7
Mzalishaji : Diodes Incorporated
Maelezo : MOSFET P-CH 20V 3A SOT23
Mfululizo : -
Hali ya Sehemu : Active
Aina ya FET : P-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 1.8V, 4.5V
Njia ya Kutumia (Max) @ Id, Vgs : 95 mOhm @ 3A, 4.5V
Vgs (th) (Max) @ Id : 1.3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 9nC @ 4.5V
Vgs (Max) : ±8V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 857pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 700mW (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : SOT-23
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3

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