Infineon Technologies - IPW60R125CFD7XKSA1

KEY Part #: K6398219

IPW60R125CFD7XKSA1 Bei (USD) [17128pcs Hisa]

  • 1 pcs$2.40622

Nambari ya Sehemu:
IPW60R125CFD7XKSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
HIGH POWERNEW.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Zener - Arrays, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - RF, Thyristors - DIAC, SIDAC, Viwango - RF, Viwango - Rectifiers - Arrays, Transistors - Bipolar (BJT) - Kufika and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
We specialize in Infineon Technologies IPW60R125CFD7XKSA1 electronic components. IPW60R125CFD7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPW60R125CFD7XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPW60R125CFD7XKSA1 Sifa za Bidhaa

Nambari ya Sehemu : IPW60R125CFD7XKSA1
Mzalishaji : Infineon Technologies
Maelezo : HIGH POWERNEW
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 125 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id : 4.5V @ 390µA
Malango ya Lango (Qg) (Max) @ Vgs : 36nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 1503pF @ 400V
Makala ya FET : -
Kuondoa Nguvu (Max) : 92W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Through Hole
Kifurushi cha Kifaa cha Mtoaji : PG-TO247-3
Kifurushi / Kesi : TO-247-3