EPC - EPC2022

KEY Part #: K6407444

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Faida ya Ushindani:: We specialize in EPC EPC2022 electronic components. EPC2022 can be shipped within 24 hours after order. If you have any demands for EPC2022, Please submit a Request for Quotation here or send us an email: rfq@key-components.com

Nambari ya Sehemu : EPC2022

Mzalishaji : EPC

Maelezo : GAN TRANS 100V 3MOHM BUMPED DIE

Mfululizo : eGaN®

Hali ya Sehemu : Active

Aina ya FET : N-Channel

Teknolojia : GaNFET (Gallium Nitride)

Kukata kwa Voltage Voltage (Vdss) : 100V

Sasa - Dawa inayoendelea (Id) @ 25 ° C : 60A (Ta)

Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V

Njia ya Kutumia (Max) @ Id, Vgs : 3.2 mOhm @ 25A, 5V

Vgs (th) (Max) @ Id : 2.5V @ 12mA

Malango ya Lango (Qg) (Max) @ Vgs : -

Vgs (Max) : +6V, -4V

Uingizwaji uwezo (Ciss) (Max) @ Vds : 1500pF @ 50V

Makala ya FET : -

Kuondoa Nguvu (Max) : -

Joto la Kufanya kazi : -40°C ~ 150°C (TJ)

Aina ya Kuinua : Surface Mount

Kifurushi cha Kifaa cha Mtoaji : Die

Kifurushi / Kesi : Die

Unaweza pia Kuvutiwa Na

PN3685

ON Semiconductor

MOSFET N-CH TO-92.
ZVN0124A

Diodes Incorporated

MOSFET N-CH 240V 0.16A TO92-3.
ZVNL110ASTZ

Diodes Incorporated

MOSFET N-CH 100V 320MA TO92-3.
IRFN214BTA_FP001

ON Semiconductor

MOSFET N-CH 250V 0.6A TO-92.
2SK3462(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 3A PW-MOLD.
2SK3342(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 4.5A PW-MOLD.

Sehemu za Moto