ON Semiconductor - DTC123JET1G

KEY Part #: K6528354

DTC123JET1G Bei (USD) [3306981pcs Hisa]

  • 1 pcs$0.01118
  • 3,000 pcs$0.01027
  • 6,000 pcs$0.00927
  • 15,000 pcs$0.00806
  • 30,000 pcs$0.00725
  • 75,000 pcs$0.00645
  • 150,000 pcs$0.00537

Nambari ya Sehemu:
DTC123JET1G
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
TRANS PREBIAS NPN 200MW SC75.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Viwango - Rectifiers - Moja, Transistors - Ushirikiano uliopangwa, Thyristors - TRIAC, Thyristors - SCR, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Moja, Thyristors - SCRs - Moduli and Viwango - Zener - Arrays ...
Faida ya Ushindani:
We specialize in ON Semiconductor DTC123JET1G electronic components. DTC123JET1G can be shipped within 24 hours after order. If you have any demands for DTC123JET1G, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

DTC123JET1G Sifa za Bidhaa

Nambari ya Sehemu : DTC123JET1G
Mzalishaji : ON Semiconductor
Maelezo : TRANS PREBIAS NPN 200MW SC75
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 100mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 2.2 kOhms
Upinzani - Base ya Emitter (R2) : 47 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 80 @ 5mA, 10V
Vce Saturdayation (Max) @ Ib, Ic : 250mV @ 1mA, 10mA
Sasa - Ushuru Mtoaji : 500nA
Mara kwa mara - Mpito : -
Nguvu - Max : 200mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : SC-75, SOT-416
Kifurushi cha Kifaa cha Mtoaji : SC-75

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