Infineon Technologies - BCR512E6327HTSA1

KEY Part #: K6528283

BCR512E6327HTSA1 Bei (USD) [1461272pcs Hisa]

  • 1 pcs$0.02544
  • 3,000 pcs$0.02531
  • 6,000 pcs$0.02201
  • 15,000 pcs$0.01871
  • 30,000 pcs$0.01761
  • 75,000 pcs$0.01651

Nambari ya Sehemu:
BCR512E6327HTSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
TRANS PREBIAS NPN 0.33W SOT23-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - Arrays, Transistors - IGBTs - Moduli, Thyristors - DIAC, SIDAC, Transistors - JFETs, Transistors - FET, MOSFETs - Moja, Transistors - Bipolar (BJT) - Moja, Viwango - Rectifiers - Arrays and Thyristors - TRIAC ...
Faida ya Ushindani:
We specialize in Infineon Technologies BCR512E6327HTSA1 electronic components. BCR512E6327HTSA1 can be shipped within 24 hours after order. If you have any demands for BCR512E6327HTSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BCR512E6327HTSA1 Sifa za Bidhaa

Nambari ya Sehemu : BCR512E6327HTSA1
Mzalishaji : Infineon Technologies
Maelezo : TRANS PREBIAS NPN 0.33W SOT23-3
Mfululizo : -
Hali ya Sehemu : Last Time Buy
Aina ya Transistor : NPN - Pre-Biased
Sasa - Mtoza (Ic) (Max) : 500mA
Voltage - Kukusanya Emitter Kuvunja (Max) : 50V
Upinzani - Msingi (R1) : 4.7 kOhms
Upinzani - Base ya Emitter (R2) : 4.7 kOhms
DC Sasa Gain (hFE) (Min) @ Ic, Vce : 60 @ 50mA, 5V
Vce Saturdayation (Max) @ Ib, Ic : 300mV @ 2.5mA, 50mA
Sasa - Ushuru Mtoaji : 100nA (ICBO)
Mara kwa mara - Mpito : 100MHz
Nguvu - Max : 330mW
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : TO-236-3, SC-59, SOT-23-3
Kifurushi cha Kifaa cha Mtoaji : SOT-23-3

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