Infineon Technologies - IRF3717TRPBF

KEY Part #: K6420148

IRF3717TRPBF Bei (USD) [164664pcs Hisa]

  • 1 pcs$0.22462
  • 4,000 pcs$0.21561

Nambari ya Sehemu:
IRF3717TRPBF
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 20V 20A 8-SOIC.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Arrays, Thyristors - TRIAC, Viwango - Bridge Rectifiers, Moduli za Dereva za Nguvu, Thyristors - SCRs - Moduli, Transistors - FET, MOSFETs - Moja, Viwango - Rectifiers - Moja and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Infineon Technologies IRF3717TRPBF electronic components. IRF3717TRPBF can be shipped within 24 hours after order. If you have any demands for IRF3717TRPBF, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF3717TRPBF Sifa za Bidhaa

Nambari ya Sehemu : IRF3717TRPBF
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 20V 20A 8-SOIC
Mfululizo : HEXFET®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 20V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 20A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4.5V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 4.4 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2.45V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 33nC @ 4.5V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2890pF @ 10V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : 8-SO
Kifurushi / Kesi : 8-SOIC (0.154", 3.90mm Width)

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