EPC2012C Bei (USD) [78588pcs Hisa]
- 1 pcs$0.56967
- 1,000 pcs$0.56684
- Nambari ya Sehemu:
- EPC2012C
- Mzalishaji:
- EPC
- Maelezo ya kina:
- GANFET TRANS 200V 5A BUMPED DIE.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Thyristors - SCRs - Moduli, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Transistors - FET, MOSFETs - Moja, Transistors - FET, MOSFETs - Arrays, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum and Viwango - RF ...
- Faida ya Ushindani:
- We specialize in EPC EPC2012C electronic components. EPC2012C can be shipped within 24 hours after order. If you have any demands for EPC2012C, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
EPC2012C Sifa za Bidhaa
Nambari ya Sehemu :
EPC2012C
Mzalishaji :
EPC
Maelezo :
GANFET TRANS 200V 5A BUMPED DIE
Mfululizo :
eGaN®
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
GaNFET (Gallium Nitride)
Kukata kwa Voltage Voltage (Vdss) :
200V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
5V
Njia ya Kutumia (Max) @ Id, Vgs :
100 mOhm @ 3A, 5V
Vgs (th) (Max) @ Id :
2.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
1.3nC @ 5V
Vgs (Max) :
+6V, -4V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
140pF @ 100V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
-
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
Die Outline (4-Solder Bar)
Kifurushi / Kesi :
Die
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