Vishay Semiconductor Diodes Division - US1J-E3/61T

KEY Part #: K6452641

US1J-E3/61T Bei (USD) [766693pcs Hisa]

  • 1 pcs$0.04824
  • 1,800 pcs$0.04128
  • 3,600 pcs$0.03715
  • 5,400 pcs$0.03508
  • 12,600 pcs$0.03199
  • 45,000 pcs$0.02993

Nambari ya Sehemu:
US1J-E3/61T
Mzalishaji:
Vishay Semiconductor Diodes Division
Maelezo ya kina:
DIODE GEN PURP 600V 1A DO214AC. Rectifiers 1.0 Amp 600 Volt
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Transistors - FET, MOSFETs - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Arrays, Viwango - Rectifiers - Moja, Viwango - Bridge Rectifiers and Thyristors - SCR ...
Faida ya Ushindani:
We specialize in Vishay Semiconductor Diodes Division US1J-E3/61T electronic components. US1J-E3/61T can be shipped within 24 hours after order. If you have any demands for US1J-E3/61T, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

US1J-E3/61T Sifa za Bidhaa

Nambari ya Sehemu : US1J-E3/61T
Mzalishaji : Vishay Semiconductor Diodes Division
Maelezo : DIODE GEN PURP 600V 1A DO214AC
Mfululizo : -
Hali ya Sehemu : Active
Aina ya Diode : Standard
Voltage - DC Reverse (Vr) (Max) : 600V
Sasa - Wastani Aliyerekebishwa (Io) : 1A
Voltage - Mbele (Vf) (Max) @ Kama : 1.7V @ 1A
Kasi : Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) : 75ns
Sasa - Rejea kuvuja @ Vr : 10µA @ 600V
Uwezo @ Vr, F : 10pF @ 4V, 1MHz
Aina ya Kuinua : Surface Mount
Kifurushi / Kesi : DO-214AC, SMA
Kifurushi cha Kifaa cha Mtoaji : DO-214AC (SMA)
Joto la Kufanya kazi - Junction : -55°C ~ 150°C

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