Infineon Technologies - IPB020N10N5LFATMA1

KEY Part #: K6416838

IPB020N10N5LFATMA1 Bei (USD) [20943pcs Hisa]

  • 1 pcs$1.96782
  • 1,000 pcs$1.65984

Nambari ya Sehemu:
IPB020N10N5LFATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 100V D2PAK-3.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - SCRs - Moduli, Viwango - Rectifiers - Arrays, Thyristors - DIAC, SIDAC, Transistors - IGBTs - Moja, Transistors - JFETs, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl and Transistors - FET, MOSFETs - Moja ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPB020N10N5LFATMA1 Sifa za Bidhaa

Nambari ya Sehemu : IPB020N10N5LFATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 100V D2PAK-3
Mfululizo : OptiMOS™-5
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 120A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 4.1V @ 270µA
Malango ya Lango (Qg) (Max) @ Vgs : 195nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 840pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 313W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TO263-3
Kifurushi / Kesi : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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