Nambari ya Sehemu :
VS-GB200NH120N
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
IGBT 1200V 420A 1562W INT-A-PAK
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
420A
Vce (on) (Max) @ Vge, Ic :
1.8V @ 15V, 200A (Typ)
Sasa - Ushuru Mtoaji :
5mA
Uingilivu Ufungaji (Wakuu) @ Vce :
18nF @ 25V
Joto la Kufanya kazi :
-40°C ~ 150°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
Double INT-A-PAK (3 + 4)
Kifurushi cha Kifaa cha Mtoaji :
Double INT-A-PAK