Infineon Technologies - BSM100GB120DN2HOSA1

KEY Part #: K6534410

BSM100GB120DN2HOSA1 Bei (USD) [661pcs Hisa]

  • 1 pcs$70.14498

Nambari ya Sehemu:
BSM100GB120DN2HOSA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
IGBT 2 MED POWER 62MM-1.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - TRIAC, Transistors - Ushirikiano uliopangwa, Transistors - Kusudi Maalum, Transistors - FET, MOSFETs - RF, Transistors - IGBTs - Arrays, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Zener - Arrays and Transistors - IGBTs - Moduli ...
Faida ya Ushindani:
We specialize in Infineon Technologies BSM100GB120DN2HOSA1 electronic components. BSM100GB120DN2HOSA1 can be shipped within 24 hours after order. If you have any demands for BSM100GB120DN2HOSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSM100GB120DN2HOSA1 Sifa za Bidhaa

Nambari ya Sehemu : BSM100GB120DN2HOSA1
Mzalishaji : Infineon Technologies
Maelezo : IGBT 2 MED POWER 62MM-1
Mfululizo : -
Hali ya Sehemu : Not For New Designs
Aina ya IGBT : -
Usanidi : Half Bridge
Voltage - Kukusanya Emitter Kuvunja (Max) : 1200V
Sasa - Mtoza (Ic) (Max) : 150A
Nguvu - Max : 800W
Vce (on) (Max) @ Vge, Ic : 3V @ 15V, 100A
Sasa - Ushuru Mtoaji : 2mA
Uingilivu Ufungaji (Wakuu) @ Vce : 6.5nF @ 25V
Uingizaji : Standard
Mtaalam wa NTC : No
Joto la Kufanya kazi : 150°C (TJ)
Aina ya Kuinua : Chassis Mount
Kifurushi / Kesi : Module
Kifurushi cha Kifaa cha Mtoaji : Module

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