TK10J80E,S1E Bei (USD) [37612pcs Hisa]
- 1 pcs$1.21125
- 25 pcs$1.20523
- Nambari ya Sehemu:
- TK10J80E,S1E
- Mzalishaji:
- Toshiba Semiconductor and Storage
- Maelezo ya kina:
- MOSFET N-CH 800V TO-3PN.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Kupigwa kabl, Thyristors - SCR, Viwango - RF, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - Zener - Moja, Transistors - IGBTs - Moja, Viwango - uwezo wa Kubadilika (Varicaps, Varactors and Transistors - Ushirikiano uliopangwa ...
- Faida ya Ushindani:
- We specialize in Toshiba Semiconductor and Storage TK10J80E,S1E electronic components. TK10J80E,S1E can be shipped within 24 hours after order. If you have any demands for TK10J80E,S1E, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
TK10J80E,S1E Sifa za Bidhaa
Nambari ya Sehemu :
TK10J80E,S1E
Mzalishaji :
Toshiba Semiconductor and Storage
Maelezo :
MOSFET N-CH 800V TO-3PN
Mfululizo :
π-MOSVIII
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
800V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
1 Ohm @ 5A, 10V
Vgs (th) (Max) @ Id :
4V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs :
46nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
2000pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
250W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
TO-3P(N)
Kifurushi / Kesi :
TO-3P-3, SC-65-3
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