IXYS - IXFT18N90P

KEY Part #: K6395147

IXFT18N90P Bei (USD) [10912pcs Hisa]

  • 1 pcs$3.77636
  • 210 pcs$3.74872

Nambari ya Sehemu:
IXFT18N90P
Mzalishaji:
IXYS
Maelezo ya kina:
MOSFET N-CH 900V 18A TO268.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moduli, Viwango - RF, Viwango - Zener - Moja, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Thyristors - DIAC, SIDAC, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Kufika and Transistors - IGBTs - Moja ...
Faida ya Ushindani:
We specialize in IXYS IXFT18N90P electronic components. IXFT18N90P can be shipped within 24 hours after order. If you have any demands for IXFT18N90P, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IXFT18N90P Sifa za Bidhaa

Nambari ya Sehemu : IXFT18N90P
Mzalishaji : IXYS
Maelezo : MOSFET N-CH 900V 18A TO268
Mfululizo : HiPerFET™, PolarP2™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 900V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 18A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 600 mOhm @ 500mA, 10V
Vgs (th) (Max) @ Id : 6.5V @ 1mA
Malango ya Lango (Qg) (Max) @ Vgs : 97nC @ 10V
Vgs (Max) : ±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 5230pF @ 25V
Makala ya FET : -
Kuondoa Nguvu (Max) : 540W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : TO-268
Kifurushi / Kesi : TO-268-3, D³Pak (2 Leads + Tab), TO-268AA