ON Semiconductor - FDB0260N1007L

KEY Part #: K6392724

FDB0260N1007L Bei (USD) [23921pcs Hisa]

  • 1 pcs$1.73154
  • 800 pcs$1.72292

Nambari ya Sehemu:
FDB0260N1007L
Mzalishaji:
ON Semiconductor
Maelezo ya kina:
MOSFET N-CH 100V 200A D2PAK.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja, Viwango - Zener - Moja, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - Kufika, Viwango - RF, Transistors - IGBTs - Arrays and Viwango - uwezo wa Kubadilika (Varicaps, Varactors ...
Faida ya Ushindani:
We specialize in ON Semiconductor FDB0260N1007L electronic components. FDB0260N1007L can be shipped within 24 hours after order. If you have any demands for FDB0260N1007L, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

FDB0260N1007L Sifa za Bidhaa

Nambari ya Sehemu : FDB0260N1007L
Mzalishaji : ON Semiconductor
Maelezo : MOSFET N-CH 100V 200A D2PAK
Mfululizo : PowerTrench®
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 200A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
Njia ya Kutumia (Max) @ Id, Vgs : 2.6 mOhm @ 27A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs : 118nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 8545pF @ 50V
Makala ya FET : -
Kuondoa Nguvu (Max) : 3.8W (Ta), 250W (Tc)
Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : D²PAK (TO-263)
Kifurushi / Kesi : TO-263-7, D²Pak (6 Leads + Tab)

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