RJK6012DPE-00#J3 Bei (USD) [2176pcs Hisa]
- 1,000 pcs$0.67884
- Nambari ya Sehemu:
- RJK6012DPE-00#J3
- Mzalishaji:
- Renesas Electronics America
- Maelezo ya kina:
- MOSFET N-CH 600V 10A LDPAK.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Viwango - Zener - Moja, Viwango - Rectifiers - Moja, Viwango - RF, Transistors - IGBTs - Moja, Thyristors - DIAC, SIDAC and Viwango - Zener - Arrays ...
- Faida ya Ushindani:
- We specialize in Renesas Electronics America RJK6012DPE-00#J3 electronic components. RJK6012DPE-00#J3 can be shipped within 24 hours after order. If you have any demands for RJK6012DPE-00#J3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
RJK6012DPE-00#J3 Sifa za Bidhaa
Nambari ya Sehemu :
RJK6012DPE-00#J3
Mzalishaji :
Renesas Electronics America
Maelezo :
MOSFET N-CH 600V 10A LDPAK
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
N-Channel
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
600V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
10A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
10V
Njia ya Kutumia (Max) @ Id, Vgs :
920 mOhm @ 5A, 10V
Vgs (th) (Max) @ Id :
-
Malango ya Lango (Qg) (Max) @ Vgs :
30nC @ 10V
Vgs (Max) :
±30V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
1100pF @ 25V
Makala ya FET :
-
Kuondoa Nguvu (Max) :
100W (Tc)
Joto la Kufanya kazi :
150°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi cha Kifaa cha Mtoaji :
4-LDPAK
Kifurushi / Kesi :
SC-83
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