Infineon Technologies - BSC039N06NSATMA1

KEY Part #: K6418624

BSC039N06NSATMA1 Bei (USD) [108763pcs Hisa]

  • 1 pcs$0.34007
  • 5,000 pcs$0.27912

Nambari ya Sehemu:
BSC039N06NSATMA1
Mzalishaji:
Infineon Technologies
Maelezo ya kina:
MOSFET N-CH 60V 19A TDSON-8.
Manufacturer's standard lead time:
Katika hisa
Maisha ya rafu:
Mwaka mmoja
Chip Kutoka:
Hong Kong
RoHS:
Njia ya malipo:
Njia ya usafirishaji:
Jamii Jamii:
VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Moduli za Dereva za Nguvu, Transistors - Kusudi Maalum, Transistors - Bipolar (BJT) - Moja, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFETs - Moja and Transistors - FET, MOSFETs - Arrays ...
Faida ya Ushindani:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSC039N06NSATMA1 Sifa za Bidhaa

Nambari ya Sehemu : BSC039N06NSATMA1
Mzalishaji : Infineon Technologies
Maelezo : MOSFET N-CH 60V 19A TDSON-8
Mfululizo : OptiMOS™
Hali ya Sehemu : Active
Aina ya FET : N-Channel
Teknolojia : MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) : 60V
Sasa - Dawa inayoendelea (Id) @ 25 ° C : 19A (Ta), 100A (Tc)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 6V, 10V
Njia ya Kutumia (Max) @ Id, Vgs : 3.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 2.8V @ 36µA
Malango ya Lango (Qg) (Max) @ Vgs : 27nC @ 10V
Vgs (Max) : ±20V
Uingizwaji uwezo (Ciss) (Max) @ Vds : 2000pF @ 30V
Makala ya FET : -
Kuondoa Nguvu (Max) : 2.5W (Ta), 69W (Tc)
Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
Aina ya Kuinua : Surface Mount
Kifurushi cha Kifaa cha Mtoaji : PG-TDSON-8
Kifurushi / Kesi : 8-PowerTDFN