HTMN5130SSD-13 Bei (USD) [92797pcs Hisa]
- 1 pcs$0.42136
- 2,500 pcs$0.37135
- Nambari ya Sehemu:
- HTMN5130SSD-13
- Mzalishaji:
- Diodes Incorporated
- Maelezo ya kina:
- MOSFET 2N-CH 55V 2.6A 8SOIC.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - IGBTs - Moja, Transistors - Bipolar (BJT) - RF, Viwango - RF, Viwango - Zener - Arrays, Transistors - JFETs, Transistors - Bipolar (BJT) - Kufika, Transistors - FET, MOSFETs - RF and Viwango - Zener - Moja ...
- Faida ya Ushindani:
- We specialize in Diodes Incorporated HTMN5130SSD-13 electronic components. HTMN5130SSD-13 can be shipped within 24 hours after order. If you have any demands for HTMN5130SSD-13, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
HTMN5130SSD-13 Sifa za Bidhaa
Nambari ya Sehemu :
HTMN5130SSD-13
Mzalishaji :
Diodes Incorporated
Maelezo :
MOSFET 2N-CH 55V 2.6A 8SOIC
Mfululizo :
-
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
2.6A
Njia ya Kutumia (Max) @ Id, Vgs :
130 mOhm @ 3A, 10V
Vgs (th) (Max) @ Id :
3V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
8.9nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
218.7pF @ 25V
Nguvu - Max :
1.7W
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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