Infineon Technologies - SPD03N60C3BTMA1

KEY Part #: K6413106

[13214pcs Hisa]


    Nambari ya Sehemu:
    SPD03N60C3BTMA1
    Mzalishaji:
    Infineon Technologies
    Maelezo ya kina:
    MOSFET N-CH 650V 3.2A DPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Thyristors - TRIAC, Transistors - Bipolar (BJT) - Kufika, Viwango - Rectifiers - Moja, Transistors - IGBTs - Moduli, Transistors - Bipolar (BJT) - RF, Viwango - RF and Viwango - Bridge Rectifiers ...
    Faida ya Ushindani:
    We specialize in Infineon Technologies SPD03N60C3BTMA1 electronic components. SPD03N60C3BTMA1 can be shipped within 24 hours after order. If you have any demands for SPD03N60C3BTMA1, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SPD03N60C3BTMA1 Sifa za Bidhaa

    Nambari ya Sehemu : SPD03N60C3BTMA1
    Mzalishaji : Infineon Technologies
    Maelezo : MOSFET N-CH 650V 3.2A DPAK
    Mfululizo : CoolMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 650V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 3.2A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 1.4 Ohm @ 2A, 10V
    Vgs (th) (Max) @ Id : 3.9V @ 135µA
    Malango ya Lango (Qg) (Max) @ Vgs : 17nC @ 10V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 400pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 38W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : PG-TO252-3
    Kifurushi / Kesi : TO-252-3, DPak (2 Leads + Tab), SC-63