IRF7341GTRPBF Bei (USD) [100763pcs Hisa]
- 1 pcs$0.38805
- 4,000 pcs$0.37253
- Nambari ya Sehemu:
- IRF7341GTRPBF
- Mzalishaji:
- Infineon Technologies
- Maelezo ya kina:
- MOSFET N-CH 55V 5.1A.
- Manufacturer's standard lead time:
- Katika hisa
- Maisha ya rafu:
- Mwaka mmoja
- Chip Kutoka:
- Hong Kong
- RoHS:
- Njia ya malipo:
-
- Njia ya usafirishaji:
- Jamii Jamii:
- VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Ushirikiano uliopangwa, Transistors - Bipolar (BJT) - Moja, Iliyopendekezw, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Viwango - Bridge Rectifiers, Transistors - FET, MOSFETs - RF, Moduli za Dereva za Nguvu, Thyristors - DIAC, SIDAC and Transistors - Kusudi Maalum ...
- Faida ya Ushindani:
- We specialize in Infineon Technologies IRF7341GTRPBF electronic components. IRF7341GTRPBF can be shipped within 24 hours after order. If you have any demands for IRF7341GTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF7341GTRPBF Sifa za Bidhaa
Nambari ya Sehemu :
IRF7341GTRPBF
Mzalishaji :
Infineon Technologies
Maelezo :
MOSFET N-CH 55V 5.1A
Mfululizo :
HEXFET®
Hali ya Sehemu :
Active
Aina ya FET :
2 N-Channel (Dual)
Makala ya FET :
Standard
Kukata kwa Voltage Voltage (Vdss) :
55V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
5.1A
Njia ya Kutumia (Max) @ Id, Vgs :
50 mOhm @ 5.1A, 10V
Vgs (th) (Max) @ Id :
1V @ 250µA (Min)
Malango ya Lango (Qg) (Max) @ Vgs :
44nC @ 10V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
780pF @ 25V
Nguvu - Max :
2.4W
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Surface Mount
Kifurushi / Kesi :
8-SOIC (0.154", 3.90mm Width)
Kifurushi cha Kifaa cha Mtoaji :
8-SO
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