Nambari ya Sehemu :
VS-GT50TP120N
Mzalishaji :
Vishay Semiconductor Diodes Division
Maelezo :
IGBT 1200V 100A 405W INT-A-PAK
Voltage - Kukusanya Emitter Kuvunja (Max) :
1200V
Sasa - Mtoza (Ic) (Max) :
100A
Vce (on) (Max) @ Vge, Ic :
2.35V @ 15V, 50A
Sasa - Ushuru Mtoaji :
5mA
Uingilivu Ufungaji (Wakuu) @ Vce :
6.24nF @ 30V
Joto la Kufanya kazi :
175°C (TJ)
Aina ya Kuinua :
Chassis Mount
Kifurushi / Kesi :
INT-A-PAK (3 + 4)
Kifurushi cha Kifaa cha Mtoaji :
INT-A-PAK