NXP USA Inc. - PH3830L,115

KEY Part #: K6415220

[12484pcs Hisa]


    Nambari ya Sehemu:
    PH3830L,115
    Mzalishaji:
    NXP USA Inc.
    Maelezo ya kina:
    MOSFET N-CH 30V 98A LFPAK.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Transistors - Bipolar (BJT) - Kufika, Transistors - Bipolar (BJT) - RF, Viwango - uwezo wa Kubadilika (Varicaps, Varactors, Thyristors - DIAC, SIDAC, Viwango - Zener - Arrays, Viwango - Rectifiers - Moja, Viwango - Rectifiers - Arrays and Thyristors - SCRs - Moduli ...
    Faida ya Ushindani:
    We specialize in NXP USA Inc. PH3830L,115 electronic components. PH3830L,115 can be shipped within 24 hours after order. If you have any demands for PH3830L,115, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    PH3830L,115 Sifa za Bidhaa

    Nambari ya Sehemu : PH3830L,115
    Mzalishaji : NXP USA Inc.
    Maelezo : MOSFET N-CH 30V 98A LFPAK
    Mfululizo : TrenchMOS™
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 30V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 98A (Tc)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 5V, 10V
    Njia ya Kutumia (Max) @ Id, Vgs : 3.8 mOhm @ 25A, 10V
    Vgs (th) (Max) @ Id : 2V @ 1mA
    Malango ya Lango (Qg) (Max) @ Vgs : 33nC @ 5V
    Vgs (Max) : ±20V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 3190pF @ 10V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 62.5W (Tc)
    Joto la Kufanya kazi : -55°C ~ 150°C (TJ)
    Aina ya Kuinua : Surface Mount
    Kifurushi cha Kifaa cha Mtoaji : LFPAK56, Power-SO8
    Kifurushi / Kesi : SC-100, SOT-669

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