Nambari ya Sehemu :
RURD660
Mzalishaji :
ON Semiconductor
Maelezo :
DIODE GEN PURP 600V 6A TO251
Hali ya Sehemu :
Obsolete
Voltage - DC Reverse (Vr) (Max) :
600V
Sasa - Wastani Aliyerekebishwa (Io) :
6A
Voltage - Mbele (Vf) (Max) @ Kama :
1.5V @ 6A
Kasi :
Fast Recovery =< 500ns, > 200mA (Io)
Rudisha Wakati wa Kuokoa (trr) :
60ns
Sasa - Rejea kuvuja @ Vr :
100µA @ 600V
Aina ya Kuinua :
Through Hole
Kifurushi / Kesi :
TO-251-2, IPak
Kifurushi cha Kifaa cha Mtoaji :
TO-251-2
Joto la Kufanya kazi - Junction :
-65°C ~ 175°C