Vishay Siliconix - IRLD110

KEY Part #: K6415146

[12510pcs Hisa]


    Nambari ya Sehemu:
    IRLD110
    Mzalishaji:
    Vishay Siliconix
    Maelezo ya kina:
    MOSFET N-CH 100V 1A 4-DIP.
    Manufacturer's standard lead time:
    Katika hisa
    Maisha ya rafu:
    Mwaka mmoja
    Chip Kutoka:
    Hong Kong
    RoHS:
    Njia ya malipo:
    Njia ya usafirishaji:
    Jamii Jamii:
    VITAMBUZI VYA Co, LTD ni Msambazaji wa Vipengele vya Elektroniki ambavyo hutoa aina za bidhaa pamoja na: Thyristors - DIAC, SIDAC, Viwango - Bridge Rectifiers, Transistors - Bipolar (BJT) - Kufika, Viwango - Zener - Moja, Viwango - Zener - Arrays, Viwango - RF, Transistors - Bipolar (BJT) - Moja and Transistors - IGBTs - Moduli ...
    Faida ya Ushindani:
    We specialize in Vishay Siliconix IRLD110 electronic components. IRLD110 can be shipped within 24 hours after order. If you have any demands for IRLD110, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    IRLD110 Sifa za Bidhaa

    Nambari ya Sehemu : IRLD110
    Mzalishaji : Vishay Siliconix
    Maelezo : MOSFET N-CH 100V 1A 4-DIP
    Mfululizo : -
    Hali ya Sehemu : Obsolete
    Aina ya FET : N-Channel
    Teknolojia : MOSFET (Metal Oxide)
    Kukata kwa Voltage Voltage (Vdss) : 100V
    Sasa - Dawa inayoendelea (Id) @ 25 ° C : 1A (Ta)
    Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) : 4V, 5V
    Njia ya Kutumia (Max) @ Id, Vgs : 540 mOhm @ 600mA, 5V
    Vgs (th) (Max) @ Id : 2V @ 250µA
    Malango ya Lango (Qg) (Max) @ Vgs : 6.1nC @ 5V
    Vgs (Max) : ±10V
    Uingizwaji uwezo (Ciss) (Max) @ Vds : 250pF @ 25V
    Makala ya FET : -
    Kuondoa Nguvu (Max) : 1.3W (Ta)
    Joto la Kufanya kazi : -55°C ~ 175°C (TJ)
    Aina ya Kuinua : Through Hole
    Kifurushi cha Kifaa cha Mtoaji : 4-DIP, Hexdip, HVMDIP
    Kifurushi / Kesi : 4-DIP (0.300", 7.62mm)

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