Nambari ya Sehemu :
IRLD110
Mzalishaji :
Vishay Siliconix
Maelezo :
MOSFET N-CH 100V 1A 4-DIP
Hali ya Sehemu :
Obsolete
Teknolojia :
MOSFET (Metal Oxide)
Kukata kwa Voltage Voltage (Vdss) :
100V
Sasa - Dawa inayoendelea (Id) @ 25 ° C :
1A (Ta)
Voltage ya Hifadhi (Njia Mbadala ya Mafuta, Njia Mbichi kwa) :
4V, 5V
Njia ya Kutumia (Max) @ Id, Vgs :
540 mOhm @ 600mA, 5V
Vgs (th) (Max) @ Id :
2V @ 250µA
Malango ya Lango (Qg) (Max) @ Vgs :
6.1nC @ 5V
Uingizwaji uwezo (Ciss) (Max) @ Vds :
250pF @ 25V
Kuondoa Nguvu (Max) :
1.3W (Ta)
Joto la Kufanya kazi :
-55°C ~ 175°C (TJ)
Aina ya Kuinua :
Through Hole
Kifurushi cha Kifaa cha Mtoaji :
4-DIP, Hexdip, HVMDIP
Kifurushi / Kesi :
4-DIP (0.300", 7.62mm)